Currently, the operating voltage of commercially available EVs is around 300~400V, and the range can already reach the level of fuel vehicles, but the slow charging time is still the biggest pain point, prompting EV manufacturers to actively develop high-power fast charging stations. In order to match the use of EVs, it is inevitable to move to higher voltage development, after raising to 800V, it can greatly reduce the fast charging current and can use the lower price of small diameter high voltage wiring harnesses, and can optimize the use of efficiency due to less heat generation from batteries, so from 2021 onwards, there will be more than 800V models on the market. Nowadays, most electric vehicles below 600V use silicon-based MOSFET power components, while those above 600V use silicon-based IGBTs. However, during the power conversion process, the silicon-based power components that are subjected to high-voltage and high-current shocks are more prone to damage due to heat generation, and in order to solve this problem, some manufacturers have introduced wide-gap semiconductor materials, which provide power components with higher breakdown voltages and temperature tolerances. The result is power components with higher breakdown voltage and temperature tolerance, better reliability, faster switching speeds for high-frequency operation, and lower on-resistance for less power consumption, which are attracting more and more automakers to adopt them. Gallium nitride (GaN) and silicon carbide (SiC) are the most widely used wide-gap semiconductor materials. The main difference between the two is that SiC has a higher voltage resistance, which makes it suitable for electric vehicles, supercharging stations, transportation vehicles, and energy applications that require high voltage, whereas GaN has a faster switching frequency, which makes it suitable for consumer electronics, light-duty vehicles, hybrids, and 5G RF communication applications, as shown in Fig. 2. Some areas of the two overlap in electric vehicles. Generally, silicon carbide power components are selected for high voltage and high current applications above 600V, while gallium nitride power components are selected for medium voltage and high switching frequency applications below 600V. Despite the excellent performance of silicon carbide power components, they will not completely replace silicon-based IGBTs or MOSFETs due to their respective advantages in switching characteristics, power consumption, and cost, but will be developed in their own applications where they are well suited.