The grown silicon carbide monocrystalline anchors have to be cut. Due to its hardness and easy to brittle characteristics, making the cutting of ingots difficult and easy to wear, and thus the stability of the equipment requirements are very high, has developed mechanical, laser, ion deposition and discharge four cutting technologies, the comparison of which is listed in Table 2, the vast majority of silicon-carbide substrate manufacturers are using the mature technology of diamond wire cutting technology, and most of the other innovative technologies are in the promotional or testing and verification stage. The other innovative technologies are mostly at the stage of promotion or testing and verification.