Driven by energy saving and carbon reduction policies and related subsidy programs in various countries, the global electric vehicle and renewable energy markets are booming, driving huge demand for power components. However, commonly used silicon-based power components can hardly cope with high voltage applications above 600V, and it is necessary to find alternative materials, of which silicon carbide has attracted the most attention. Currently known silicon carbide crystal structure of more than 250 kinds, are composed of four silicon atoms around a carbon atom formed by the tetragonal cone structure, however, because of the stacking order of the differences in the formation of different crystal structures, the most commonly used 3C-SiC, 4H-SiC and 6H-SiC and so on, C means the final composition is a cubic structure, the H refers to the final composition is a hexagonal structure, and the number of the same stacked The number is the recurrence period of the same stacked structure. Generally, 4H-SiC and 6H-SiC are collectively called α-SiC, and 3C-SiC is called β-SiC, among which α-SiC is the most commonly used in the semiconductor field.