September_SiC Silicon Carbide Special Topics|SiC Wafer Fabrication Process Technology Development Overview(Next)

The grown silicon carbide monocrystalline anchors are then subjected to a cutting process. Due to its hardness and brittle characteristics, it is difficult to cut the ingots and is prone to wear and tear. ... Read more

2023-09-07t16:27:32+08:002023/09/07|Categories: 科技(Technology)|Tags: , , |

September_SiC Silicon Carbide Special Topics|SiC Wafer Fabrication Process Technology Development Overview(Up)

The production of silicon carbide substrate needs to go through the process steps such as long crystal, cutting, edge guiding, grinding, polishing, cleaning, shipment inspection, etc., among which the key to affect the quality is long crystal, cutting, and so on. ... Read more

2023-09-07t16:21:40+08:002023/09/01|Categories: 科技(Technology)|Tags: , , |
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